200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 4.9 A, 2

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =720mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

200V N-Channel PowerTrench MOSFET

N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

2600B System SourceMeter® SMU Instruments

Key Features • Tightly integrated, 4-quadrant voltage/current source and measure instruments offer best in class performance with 6½-digit resolution • Family of models offer industry’s widest dynamic range: 10 A pulse to 0.1 fA and 200 V to 100 nV • Built-in web browser based software enabl

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