N 沟道，PowerTrench® MOSFET，逻辑电平，30V，6.1A，27 mΩ

该N沟道逻辑电平MOSFET是低电压和电池电源应用的有效解决方案。 由于采用飞兆半导体先进的PowerTrench®工艺，该器件具有最低的通态电阻，可以优化功耗。 非常适合重视线路内功率损耗的应用。 •VGS = 10V，ID = 6.1A时，最大RDS(on) = 27mΩ\n•VGS = 4.5V，ID = 5.3A时，最大rDS(on) = 36 mΩ\n•SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。\n•符合RoHS标准;

Single N-Channel, Logic Level, PowerTrench짰 MOSFET 30V, 6.1A, 27m廓

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