P-Channel 1.8V PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Features • –8 A, –20 V RDS(ON) = 20 mΩ @ VGS = –4.5 V RDS(ON) = 25 mΩ @ VGS = –2.5 V RDS(ON) = 35 mΩ @ VGS = –1.8

P-Channel 1.8V PowerTrench MOSFET

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 7.5 AMP, STANDARD AND FAST RECOVERY

DESCRIPTION The miniature molded high-current single-phase bridges are designed for universal application in power supplies. FEATURES ● Miniature High Current Assemblies ● Continuous Ratings: to 7.5A ● Surge Ratings: to 80A ● PIVs: from 100V to 600V ● Recovery Times: to 500ns ● Only Fused-

The complete Signal Tower Solution

文件：780.57 Kbytes Page：6 Pages

The complete Signal Tower Solution

文件：780.57 Kbytes Page：6 Pages

The complete Signal Tower Solution

文件：780.57 Kbytes Page：6 Pages

The complete Signal Tower Solution

文件：780.57 Kbytes Page：6 Pages