Single P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited f

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 此类器件非常适合笔记本电脑应用： 负载开关和功率管理、电池充电电路和DC/DC转换。 •-4A，-30V。 VGS = -10 V时，RDS(ON) = 0.050 Ω；VGS = 4.5 V时，RDS(ON) = 0.075 Ω\n•低栅极电荷（典型值8nC）。\n•高性能沟道技术可实现极低的rDS(ON)。\n•SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）;

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA APPLICATIONS * Telephone dialler circuits * Hook switches for modems * Predrivers within HID lamp ballasts * (SLIC) Subscriber Line Interface Cards

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Low saturation voltage

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt APPLICATIONS * Telephone dialler circuits

RF POWER TRANSISTOR NPN SILICON

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Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER

文件：215.97 Kbytes Page：13 Pages