双 P 沟道 PowerTrench® MOSFET，逻辑电平，-30V，-1.8A，170mΩ

这些P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能以极小的尺寸提供出色的功耗，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •-1.8 A，-30 V。\n•RDS(on) = 0.170 Ω @ VGS = -10 V\n•RDS(on) = 0.280 Ω @ VGS = -4.5 V\n•低栅极电荷（典型值2.3nC）\n•快速开关速度。\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。 ;

Dual P-Channel 20 V (D-S) MOSFET

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Dual P-Channel Logic Level PowerTrench??MOSFET

文件：204.08 Kbytes Page：8 Pages

丝印代码：2623；Dual P-Channel Enhancement Mode MOSFET

Application Battery protection » Load switch Power management » DC/DC converter

Dual P-Channel Logic Level PowerTrench??MOSFET

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CURRENTCONTROLLER FOR STEPPING MOTORS

DESCRIPTION The L6506/D is a linear integrated circuit designed to sense and control the current in stepping motors and similar devices. When used in conjunction with the L293, L298, L7150, L6114/L6115, the chip set forms a constant current drive for an inductive load and performs all the inter

DIODE ARRAY CIRCUITS

DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

8 AMP ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION

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