P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ

Features Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm t

P 沟道，PowerTrench® MOSFET，-30V，-4.9A，42mΩ

此沟道 MOSFET 采用 Fairchild 先进的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻同时仍保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合电池供电应用： 负载开关和功率管理、电池充电电路和DC/DC转换。 •最大 rDS(on)=42mΩ（VGS=-10 V、ID=-4.9 A）\n•最大 rDS(on)=75 mΩ（VGS=-4.5 V、ID=-3.7 A）\n•低栅极电荷（典型值17 nC）。\n•高性能沟道技术可实现极低的 rDS(on)。\n•SuperSOT™-6封装： 小尺寸（比标准 SO-8 小 72%）；薄型（1 mm 厚）。\n•符合 RoHS 标准;

P-Channel PowerTrench짰 MOSFET

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丝印代码：3P5；30V P-CHANNEL ENHANCEMENT MODE MOSFET

Application « DCDC Converters. © Load Switch. «Power Management

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