P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V

-20V P-Channel Enhancement Mode MOSFET

Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

P-Channel 1.8V Specified PowerTrench MOSFET

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P-Channel 1.8V Specified PowerTrench MOSFET

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Aluminum Capacitors 4-Terminal, Tubular, Axial Lead

FEATURES • 4-terminal construction • Very low impedance • Inductance limit 2 nH • Wide temperature range • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912

Aluminum Capacitors 4-Terminal, Tubular, Axial Lead

FEATURES • 4-terminal construction • Very low impedance • Inductance limit 2 nH • Wide temperature range • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Phase Control Thyristors (Capsule Type)

Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor control • AC controllers • DC power supplies

횠5.0mm mounting Robust bright nickel plated brass housing

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Aluminum Capacitors 4-Terminal, Tubular, Axial Lead

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