200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 1.1

丝印代码：262P；N-Channel MOSFET 200V, 1.5A, 0.7

Features Vbs =200V b= 1.5A Roson)

N 沟道，PowerTrench® MOSFET，200V，1.1A，725mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •1.1A, 200V\n•RDS(on) = 725 mΩ@ VGS = 10 V\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力\n•快速开关速度\n•低栅极电荷（典型值8nC）;

400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits

文件：2.31886 Mbytes Page：19 Pages

400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits

文件：6.03566 Mbytes Page：19 Pages

400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits

文件：2.31886 Mbytes Page：19 Pages

400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits

文件：2.31886 Mbytes Page：19 Pages

400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits

文件：2.31886 Mbytes Page：19 Pages