isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=300A@ TC=25℃ ·Drain Source Voltage- VDSS= 40V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Powe

MOSFET - Power, Single N-Channel, TOLL 40 V, 0.67 m, 240 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Small Footprint (TOLL) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

N-Channel PowerTrench짰 MOSFET

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N 沟道，PowerTrench® MOSFET，40V，300A，0.5mΩ

Power MOSFET, Single N-Channel, 40 V, 0.67 mΩ, 240 A

包装：管件 描述：MOSFET N-CH 40V 58.4/240A 8HPSOF 分立半导体产品 晶体管 - FET，MOSFET - 单个

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，300 A，0.55 mΩ

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