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型号 功能描述 生产厂家 企业 LOGO 操作
FDB6670S

30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky di

FAIRCHILD

仙童半导体

FDB6670S

30V N-Channel PowerTrench SyncFET

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

FAIRCHILD

仙童半导体

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

FAIRCHILD

仙童半导体

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

FAIRCHILD

仙童半导体

3.3V INPUT 20W BOOST INTEGRATED SWITCHING REGULATOR

文件:233.76 Kbytes Page:3 Pages

TI

德州仪器

FDB6670S产品属性

  • 类型

    描述

  • 型号

    FDB6670S

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-263AB
11491
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TO-263AB
11543
正规渠道,免费送样。支持账期,BOM一站式配齐
三年内
1983
只做原装正品
ON/安森美
2223+
TO-263-7L
26800
只做原装正品假一赔十为客户做到零风险
ON(安森美)
25+
标准封装
20000
原装,请咨询
ON/FSC
23+
TO-263-7L
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
FSC
24+
TO-263AB
5000
只做原装正品现货 欢迎来电查询15919825718
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON
23+
T0-263-7
3200
正规渠道,只有原装!

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