型号 功能描述 生产厂家 企业 LOGO 操作
FDB6670S

30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky di

FAIRCHILD

仙童半导体

FDB6670S

30V N-Channel PowerTrench SyncFET

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

FAIRCHILD

仙童半导体

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

FAIRCHILD

仙童半导体

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

FAIRCHILD

仙童半导体

3.3V INPUT 20W BOOST INTEGRATED SWITCHING REGULATOR

文件:233.76 Kbytes Page:3 Pages

TI

德州仪器

FDB6670S产品属性

  • 类型

    描述

  • 型号

    FDB6670S

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-16 15:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
25+
TO263
4500
全新原装、诚信经营、公司现货销售
FSC
24+
TO-263AB
5000
只做原装正品现货 欢迎来电查询15919825718
FAIRCHILD
26+
SOP8
86720
全新原装正品价格最实惠 假一赔百
FAIRCHILD/仙童
SOT-263
7940
一级代理 原装正品假一罚十价格优势长期供货
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原装正品代理渠道价格优势
FAIRCILD
22+
SOT263
8000
原装正品支持实单
FAIRCHIL
2023+
TO263-5
50000
原装现货
FAIRCHILD
2002
TO263
1545
原装现货海量库存欢迎咨询
FAIRCHILD/仙童
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
FAIRCHILD/仙童
23+
SOT-263
8000
只做原装现货

FDB6670S数据表相关新闻