isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res