200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Description • 62A, 200V, RDS(on) = 22.9mΩ @VGS = 10 V • Fast

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 27mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N 沟道，PowerTrench® MOSFET，200V，62A，27mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 22.9mΩ （典型值）@ VGS = 10V, ID = 31A\n•高性能沟道技术可实现极低的 RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力;

400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers

文件：733.44 Kbytes Page：16 Pages

400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers

文件：733.44 Kbytes Page：16 Pages

400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers

文件：733.44 Kbytes Page：16 Pages

400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers

文件：733.44 Kbytes Page：16 Pages

400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers

文件：733.44 Kbytes Page：16 Pages