200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Description • 62A, 200V, RDS(on) = 22.9mΩ @VGS = 10 V • Fast

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 27mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

2600B System SourceMeter® SMU Instruments

Key Features • Tightly integrated, 4-quadrant voltage/current source and measure instruments offer best in class performance with 6½-digit resolution • Family of models offer industry’s widest dynamic range: 10 A pulse to 0.1 fA and 200 V to 100 nV • Built-in web browser based software enabl

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2600B System SourceMeter SMU Instruments

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