N-Channel PowerTrench MOSFET 150V, 37A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A • Qg(tot) = 39nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A ● Qg(tot) = 39nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 39A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N 沟道，PowerTrench® MOSFET，150V，37A，36mΩ

N 沟道 PowerTrench® MOSFET 150V，37A，36mΩ

N-Channel PowerTrench짰 MOSFET 150V, 37A, 36m廓

文件：422.14 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 150V, 37A, 36m廓

文件：422.14 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 150V, 37A, 36m廓

文件：422.14 Kbytes Page：11 Pages

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