丝印代码：FDB075N15A；Channel Power Trench® MOSFET150V 110A, 7.5mΩ

Features -Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A -Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A -UIS Capability -RoHS Compliant -Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/alternator - Primar

N 沟道，PowerTrench® MOSFET，150V，130A，7.5mΩ

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

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N-Channel PowerTrench짰 MOSFET

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N-Channel Power Trench짰 MOSFET

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N 沟道PowerTrench® MOSFET 150V，110A，5.5mΩ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =130A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel PowerTrench짰 MOSFET 150V, 130A, 7.5m廓

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