N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ

Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high volta

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

丝印代码：FDA59N30；N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ

Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high volta

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