丝印代码：FDA59N30；N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ

Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high volta

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

功率 MOSFET，N 沟道，UniFETTM，300V，59A，56mΩ，TO-3P

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 56mΩ （最大值）@ VGS = 10V, ID = 29.5A\n•低栅极电荷（典型值 77nC） \n•低 Crss（典型值 80pF） \n•100% 经过雪崩击穿测试;

Isc N-Channel MOSFET Transistor

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300V N-Channel MOSFET

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N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ

Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high volta

N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ

Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high volta

300V N-Channel MOSFET

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