isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

650V N-Channel MOSFET

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15 Amps, 650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 15N65 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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15A, 650V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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