400V NPN High Voltage Transistor in SOT89

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. •BVCEO > 400V\n•IC = 225mA Continuous Collector Current\n•ICM = 500mA Peak Pulse Current\n•Excellent hFE Characteristics up to 100mA\n•Low saturation voltage VCE(sat) < 200mV @ 20mA\n•Complementary PNP Type: FCX558Q\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen- and Antimony-Free. “Green” De;

封装/外壳：TO-243AA 包装：卷带（TR） 描述：PWR HI VOLTAGE TRANSISTOR SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – FCX558 PARTMARKING DETAIL – N58

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

HIGH VOLTAGE VIDEO AMPLIFIERS

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuits

N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier

Features: Very Low Noise Low Gate Current Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . .