NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – FCX558 PARTMARKING DETAIL – N58

SOT89 NPN SILICON PLANAR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features ● BVCEO > -400V ● IC = -200mA High Continuous Current ● ICM = -500mA Peak Pulse Current ● Excellent hFE Characteristics up to -100mA ● Low Saturation Voltage VCE(sat)

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

NPN Silicon Planar High Voltage Transistor

Features ● 400 Volt VCEO ● Ptot= 1 Watt

NPN, 400V, 0.225A, SOT89

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes Page：7 Pages

Silicon Planar High Voltage Transistor

Features - 400V VCEO. - 225A continuous current.

400V NPN High Voltage Transistor in SOT89

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. •BVCEO > 400V\n•IC = 225mA Continuous Collector Current\n•ICM = 500mA Peak Pulse Current\n•Excellent hFE Characteristics up to 100mA\n•Low saturation voltage VCE(sat) < 200mV @ 20mA\n•Complementary PNP Type: FCX558Q\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen- and Antimony-Free. “Green” De;

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

400V NPN HIGH VOLTAGE TRANSISTOR IN SOT89

文件：569.2 Kbytes Page：7 Pages

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：PWR HI VOLTAGE TRANSISTOR SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 0.225A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE VIDEO AMPLIFIERS

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuits

N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier

Features: Very Low Noise Low Gate Current Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . .