NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – FCX558 PARTMARKING DETAIL – N58

NPN Silicon Planar High Voltage Transistor

Features ● 400 Volt VCEO ● Ptot= 1 Watt

SOT89 NPN SILICON PLANAR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features ● BVCEO > -400V ● IC = -200mA High Continuous Current ● ICM = -500mA Peak Pulse Current ● Excellent hFE Characteristics up to -100mA ● Low Saturation Voltage VCE(sat)

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes Page：7 Pages

NPN, 400V, 0.225A, SOT89

400V NPN High Voltage Transistor in SOT89

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. •BVCEO > 400V\n•IC = 225mA Continuous Collector Current\n•ICM = 500mA Peak Pulse Current\n•Excellent hFE Characteristics up to 100mA\n•Low saturation voltage VCE(sat) < 200mV @ 20mA\n•Complementary PNP Type: FCX558Q\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen- and Antimony-Free. “Green” De;

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 225mA Continuous Collector Current • ICM = 500mA Peak Pulse Current • Excellent hFE Characteristics up to 100mA • Low saturation voltage VCE(sat)

400V NPN HIGH VOLTAGE TRANSISTOR IN SOT89

文件：569.2 Kbytes Page：7 Pages

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：PWR HI VOLTAGE TRANSISTOR SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 0.225A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

400V NPN HIGH VOLTAGE TRANSISTOR

文件：499.8 Kbytes Page：7 Pages

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

HIGH VOLTAGE VIDEO AMPLIFIERS

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuits

N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier

Features: Very Low Noise Low Gate Current Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . .