N-Channel MOSFET 600V, 22A, 0.165W

Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

isc N-Channel MOSFET Transistor

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功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，22 A，165 mΩ，TO-220

SMPS MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS