isc N-Channel MOSFET Transistor

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功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，24 A，125 mΩ，TO-220

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 24 A, 125 m

General Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

Isc N-Channel MOSFET Transistor

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