分立式半导体 肖特基势垒二极管（SBD）

Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making ・Low leakage current\n・High frequency operation \n・Epoxy Resin (UL94V-0 recognized);

FOR HIGH FREQUENCY RECTIFICATION

20A 200V Cathode Common FEATURES * High VRM SBD * Low Forward Voltage Drop and Low Noise * Fully Molded Isolation * Dual Diodes Cathode Common For High FrequencyRectification

Schottky Barrier Diode

20A 200V Anode Common For High FrequencyRectification FEATURES * High VRM SBD * Low Forward Voltage Drop and Low Noise * Fully Molded Isolation * Dual Diodes Anode Common

Shottky Barrier Diode

20A 200V Cathode Common For High Frequency Rectification FEATURES * High VRM SBD * Low Forward Voltage Drop and Low Noise * Surface mounted package * Dual Diodes Cathode Common

Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 600 V Forward Current 20 A

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Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 600 V Forward Current 20 A

文件：126.44 Kbytes Page：2 Pages