N 沟道，SuperFET®，600 V，4.6 A，0.86 Ω

SuperFET® is ON Semiconductor proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching perf • 600 V、4.6 A, 典型值Rds(on)= 860 mΩ（VGS= 10 V）\n• 超低栅极电荷（典型值Qg = 16 nC）\n•UIS 能力\n• 符合 RoHS 标准\n• 符合 AEC Q101 标准;

Automotive DC/DC Converter for HEV

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