600V N-CHANNEL FRFET

Description SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，SUPERFET®，FRFET®，600 V，20 A，190 mΩ，D2PAK

SuperFET®MOSFET 是飞兆半导体第一代利用电荷平衡技术实现出色低导通电阻和更低栅极电荷性能的高压超级结（SJ）MOSFET 系列产品。这项技术专用于最小化传导损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET MOSFET产品非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX电源及工业电源应用。SuperFET FRFET®MOSFET 优化体二极管的反向恢复性能可去除额外元件并提高系统可靠性。 •650V @TJ = 150°C\n•典型值RDS(on) = 150mΩ\n•超低栅极电荷（典型值Qg = 75nC )\n•低有效输出电容（典型值Coss.eff = 165pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

N 沟道 MOSFET 600V，20A，190mΩ，

SuperFETTM作为 Fairchild 高压 MOSFET 系列的新一代专利产品，采用先进的电荷平衡机制，能够显著降低导通电阻并实现更低的栅极电荷性能。这项先进的技术专用于最大限度地减少传导损耗，提供卓越的开关性能，以及承受极端高的 dv/dt 电压变化率和更高的雪崩能量值。因此，SuperFET 非常适用于开关模式运行下的各种 AC/DC功率转换，从而实现系统的微型化以及更高的效率 •典型值 rDS(on) = 171 mΩ（VGS= 10 V、ID = 20 A）\n•典型Qg(tot)=78nC（VGS=10V、ID=20A）\n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101 标准;

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V N-CHANNEL FRFET

Description SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,

600V N-Channe MOSFET 600V, 20A, 190m廓

文件：341.81 Kbytes Page：6 Pages

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching charac teristics and results in efficie

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

Short Circuit Rated IGBT

文件：628.02 Kbytes Page：8 Pages

Short Circuit Rated IGBT

文件：540.1 Kbytes Page：7 Pages