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参考价格：￥23.6486
型号：FCB110N65F 品牌：Fairchild Semiconductor 备注：这里有FCB多少钱，2024年最近7天走势，今日出价，今日竞价，FCB批发/采购报价，FCB行情走势销售排行榜，FCB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET - Power, N-Channel, SUPERFET III, Easy Drive 650 V, 44 A, 70 m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancetechnologyistailoredtominimize conductionloss,prov | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
600V N-Channel MOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
600V N-Channel MOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600V N-Channel MOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600V N-Channel MOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhighvoltagesuper−junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon−resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconductionloss,provide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600V N-Channel MOSFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel MOSFET Description SuperFETTMisFairchild’sproprietarynewgenerationofhighvoltageMOSFETsutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,providesuperio | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-CHANNEL FRFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss, | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600V N-CHANNEL FRFET Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss, | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
FCBG110SD1C01B Finisar Compatible Direct Attach Copper Twinax Cable 10G SFP Cu (1m, Passive) Features ATGBICSFCBG110SD1C01Bcompatible10GBaseSFP+toSFP+activeopticalcableoperatesatawavelengthof850nmovermultimodefibrewitha cablelengthof1m. ItissuitableforshortreachconnectionbetweentwoSFP+portsin10Ginterconnectingnetworkingapplications. Ourproductmee | ATGBICS ATGBICS by Approved Technology |  | | |
FCBG110SD1C03 Finisar Compatible Direct Attach Copper Twinax Cable 10G SFP Cu (3m, Passive) Features ATGBICSFCBG110SD1C03compatible10GBase-CUSFP+toSFP+directattachcableoperatesoverpassivecopperwitha cablelengthof3m. ItissuitableforshortreachconnectionbetweentwoSFP+portsin10Ginterconnectingnetworkingapplications. OurproductmeetsthespecificationofF | ATGBICS ATGBICS by Approved Technology | | | |
FCBG110SD1C05 Finisar Compatible Direct Attach Copper Twinax Cable 10G SFP Cu (5m, Passive) Features ATGBICSFCBG110SD1C05compatible10GBase-CUSFP+toSFP+directattachcableoperatesoverpassivecopperwitha cablelengthof5m. ItissuitableforshortreachconnectionbetweentwoSFP+portsin10Ginterconnectingnetworkingapplications. OurproductmeetsthespecificationofF | ATGBICS ATGBICS by Approved Technology | | | |
FCBG110SD1C07 Finisar Compatible Direct Attach Copper Twinax Cable 10G SFP Cu (7m, Passive) Features ATGBICSFCBG110SD1C07compatible10GBase-CUSFP+toSFP+directattachcableoperatesoverpassivecopperwitha cablelengthof7m. ItissuitableforshortreachconnectionbetweentwoSFP+portsin10Ginterconnectingnetworkingapplications. OurproductmeetsthespecificationofF | ATGBICS ATGBICS by Approved Technology | | | |
Smart Power Module (SPM) GeneralDescription Itisanadvancedsmartpowermodule(SPM)thatFairchildhasnewlydevelopedanddesignedtoprovideverycompactandhighperformanceacmotordrivesmainlytargetinglow-powerinverter-drivenapplicationlikerefrigerator.Itcombinesoptimizedcircuitprotectionanddrive | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Smart Power Module (SPM) GeneralDescription Itisanadvancedsmartpowermodule(SPM)thatFairchildhasnewlydevelopedanddesignedtoprovideverycompactandhighperformanceacmotordrivesmainlytargetinglow-powerinverter-drivenapplicationlikerefrigerator.Itcombinesoptimizedcircuitprotectionanddrive | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Smart Power Module (SPM) GeneralDescription Itisanadvancedsmartpowermodule(SPM)thatFairchildhasnewlydevelopedanddesignedtoprovideverycompactandhighperformanceacmotordrivesmainlytargetinglow-powerinverter-drivenapplicationlikerefrigerator.Itcombinesoptimizedcircuitprotectionanddrive | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
包装：盒 描述：AC/DC CONVERTER 15V 80W 电源 - 外部/内部（板外） AC DC 转换器 | XPPXPPower XP Power |  | | |
包装：盒 描述：AC/DC CONVERTER 19V 80W 电源 - 外部/内部（板外） AC DC 转换器 | XPPXPPower XP Power | | | |
isc N-Channel MOSFET Transistor 文件：298.55 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600V N-Channel MOSFET 文件：976.05 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET 文件：976.05 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel SuperFET III MOSFET 文件：924.31 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Isc N-Channel MOSFET Transistor 文件：244.7 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Tyco Electronics Mid-Range Military/Aerospace Relays 5 AMPERES, DPDT 文件：83.78 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：44.43 Kbytes Page：1 Pages | MACOM Tyco Electronics |  | | |
FCB 5-10 Amp Relay Series, DC Actuating System 文件：131.16 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：48.95 Kbytes Page：1 Pages | MACOM Tyco Electronics | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：50.65 Kbytes Page：1 Pages | MACOM Tyco Electronics | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：49.3 Kbytes Page：1 Pages | MACOM Tyco Electronics | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT. 文件：38.64 Kbytes Page：1 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 |  | | |
Tyco Electronics Mid-Range Military/Aerospace Relays 5 AMPERES, DPDT 文件：83.78 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
600V N-Channel MOSFET 文件：1.00856 Mbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET 文件：1.00856 Mbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channe MOSFET 600V, 20A, 190m廓 文件：341.81 Kbytes Page：6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 文件：316.08 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Tyco Electronics Mid-Range Military/Aerospace Relays 5 AMPERES, DPDT 文件：83.78 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
Tyco Electronics Mid-Range Military/Aerospace Relays 5 AMPERES, DPDT 文件：83.78 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：50.9 Kbytes Page：1 Pages | MACOM Tyco Electronics | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：42.45 Kbytes Page：1 Pages | MACOM Tyco Electronics | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：43.44 Kbytes Page：1 Pages | MACOM Tyco Electronics | | | |
THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION 文件：38.85 Kbytes Page：1 Pages | MACOM Tyco Electronics | | |
FCB产品属性
- 类型
描述
- 型号
FCB
- 制造商
KERN
- 功能描述
WEIGHING, BENCH SCALE, 3KG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
TO263 |
265209 |
假一罚十原包原标签常备现货! |
||||
ON/安森美 |
23+ |
TO263 |
35316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON(安森美) |
6000 |
||||||
ON/安森美 |
23+ |
D2-PAK |
30000 |
原装正品公司现货,假一赔十! |
|||
ON(安森美) |
2335 |
D2-PAK |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
ON |
23+ |
TO263 |
20000 |
||||
ON/安森美 |
22+/23+ |
TO-263 |
9800 |
原装进口公司现货假一赔百 |
|||
ON(安森美) |
23+ |
D2-PAK |
25900 |
新到现货,只有原装 |
|||
ON/安森美 |
23+ |
D2-PAK |
36128 |
原装正品实单可谈 库存现货 |
|||
ON/安森美 |
21+ |
D2-PAK |
8080 |
只做原装,质量保证 |
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FCB数据表相关新闻
FCD850N80Z
FCD850N80Z
2024-2-26FC4010DS/AA-2272 D-Sub触点 Positronic
FC4010DS/AA-2272D-Sub触点Positronic
2023-2-2FC2231-0000-0100-L原装特价现货出售
FC2231-0000-0100-L
2022-7-8FCB110N65F ;TO263正品货源供应商报价中文资料。
技术课程，原装现货买卖，资料详情
2021-10-20FCBS0550-智能功率模块（SPM）
一般描述它是一种先进的智能功率模块（SPM）的飞兆半导体新开发和设计提供非常紧凑，高性能的交流电机驱动器主要是针对低功耗变频驱动的应用程序，比如说冰箱。它结合了优化保护电路和驱动器匹配低损耗的MOSFET。系统的可靠性得到进一步增强，综合欠压锁定和短路保护。高高速内置HVIC提供光耦合器无单电源MOSFET栅极驱动能力，进一步减少整体大小的逆变器系统的设计。每相电流逆变器可监视分别因负分直流端子。特点•UL认证No.E209204（SPM27-BA的包）•500伏-5A型三相MOSFET逆变桥
2013-2-15FC-2866-四区面板
FC-4224火灾报警控制面板是一个久经考验的的，多才多艺，四区的控制与空间来容纳一个可选数字通信。它满足的要求NFPA标准72中央车站，保护处所，和远程（DACT）监督站火灾报警系统。它列出的UL标准864，固有的权力有限并符合所有UL的瞬态抗扰度要求。的FC-4224控制的许多功能，提供一个成本效益的方法，系统设计，并让一个伟大的一定程度的灵活性，在一个机箱。这些功能包括：（4）B类，样式乙两（2）选择A类，风格Dinitiating选择两（2）B类电路一起，StyleYor一（1）类，风格ž通知设备电路，评价1.25安培。通知设备电路可配置为
2012-11-8
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