15V, 700mA Rectifier

Features • Low forward voltage (VF max=0.55V) . • Fast reverse recorvery time (trr max=10ns) . • Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. • The FC810 is formed with two chips, each being equivalent to the SB07-015C, placed in

15V, 700mA Rectifier Silicon Barrier Diode

BUCK CONVERTER

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla