NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=4.7kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC136 is formed with two chips, being equivalent to the 2SC3900, place

1A LED Lighting Driver

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IC-MOS:LED Driver

1A LED Lighting Driver

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IC-MOS:LED Driver

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

2.5V REFERENCE DIODE

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2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

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2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes Page：8 Pages