型号 功能描述 生产厂家 企业 LOGO 操作
FBR810

FAST RECOVERY BRIDGE RECTIFIERS

FEATURES : * High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Ideal for printed circuit board * Pb / RoHS Free

EIC

FBR810

FAST RECOVERY

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EIC

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

FBR810产品属性

  • 类型

    描述

  • 型号

    FBR810

  • 制造商

    EIC

  • 制造商全称

    EIC discrete Semiconductors

  • 功能描述

    FAST RECOVERY BRIDGE RECTIFIERS

更新时间:2026-3-15 22:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJITSU/富士通
2023+
DIP5
2040
十五年行业诚信经营,专注全新正品
FCI
2026+
TO-220F
4985
原装正品,假一罚十!
PHOENIX CONTACT
25+
110
公司优势库存 热卖中!
Phoenix/菲尼克斯
22/23+
连接器
395
优势货源原装现货
FUJITSU/富士通
2447
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
富士通
20+
标准
15800
原装优势主营型号-可开原型号增税票
FCI
09+
TO-220F
4985
一级代理,专注军工、汽车、医疗、工业、新能源、电力
EIC
23+
50000
原厂授权一级代理,专业海外优势订货,价格优势、品种
FCI
23+
TO-220F
50000
全新原装正品现货,支持订货
FCI
23+24
TO-220F
59630
主营原装MOS,二三级管,肖特基,功率场效应管

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