FUJI Power Supply Control IC

Overview The FA7764N is a single output step-down DC-DC converter with built-in power MOSFET. Featuring a high voltage process, it is suitable for the DC-DC converter with input voltages of up to 45 V and output currents of up to 1.5 A. It operates with the current mode control and also it can

DCDC Power Supply Control IC

DCDC Power Supply Control IC

24-Bit 312 kSPS 109dB ADC With On-Chip Buffers Serial Interface

GENERAL DESCRIPTION The AD7764 is a high performance, 24-bit Σ-Δ analog-to-digital converter (ADC). It combines wide input bandwidth, high speed, and performance of 109 dB dynamic range at a 312 kHz output data rate. With excellent dc specifications, the converter is ideal for high speed data a

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

30V N-Channel PowerTrench SyncFET

General Description The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7764S includes an integrated Schottky diode

Ultra Low Dropout, 3.0A Adjustable Positive Linear Regulator 5962 - 0323801MYA Thru-Hole (MO-078AA)

Description The OM7764ASC is a 3.0A, ultra low dropout, adjustable linear regulator specifically designed for low voltage, high current applications. Housed in a hermetic package, the dropout of these devices is 400mV at full load. All protective features are designed into the circuit including

Ultra Low Dropout, 3.0A Adjustable Positive Linear Regulator 5962 - 0323801MYA Thru-Hole (MO-078AA)

Description The OM7764ASC is a 3.0A, ultra low dropout, adjustable linear regulator specifically designed for low voltage, high current applications. Housed in a hermetic package, the dropout of these devices is 400mV at full load. All protective features are designed into the circuit including