丝印代码：F9540NS；P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt « Power Switch

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

包装：卷带（TR） 描述：CRYSTAL 54.0000MHZ 19PF 晶体，振荡器，谐振器 晶体

包装：卷带（TR） 描述：CRYSTAL 54.0000MHZ 19PF 晶体，振荡器，谐振器 晶体

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

2-channel I2C multiplexer

DESCRIPTION The PCA9540 is a 1-of-2 bi-directional translating multiplexer, controlled via the I2C bus. The SCL/SDA upstream pair fans out to two SCx/SDx downstream pairs, or channels. Only one SCx/SDx channel is selected at a time, determined by the contents of the programmable control registe

2-channel I2C multiplexer

DESCRIPTION The PCA9540 is a 1-of-2 bi-directional translating multiplexer, controlled via the I2C bus. The SCL/SDA upstream pair fans out to two SCx/SDx downstream pairs, or channels. Only one SCx/SDx channel is selected at a time, determined by the contents of the programmable control registe

2-channel I2C multiplexer

DESCRIPTION The PCA9540 is a 1-of-2 bi-directional translating multiplexer, controlled via the I2C bus. The SCL/SDA upstream pair fans out to two SCx/SDx downstream pairs, or channels. Only one SCx/SDx channel is selected at a time, determined by the contents of the programmable control registe

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.161 Ω (Typ.)