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F423-ND

3AG Slo-Blo Fuse 313/315 Series

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LITTELFUSE

力特

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

PHILIPS

飞利浦

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

PHILIPS

飞利浦

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

ONSEMI

安森美半导体

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

MOTOROLA

摩托罗拉

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

ONSEMI

安森美半导体

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