EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

IGBT模块

Hochleistungsumrichter

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EconoPACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC

Features • Electrical features - VCES = 1700 V - IC nom = 200 A / ICRM = 400 A - Low VCEsat - Tvj op = 150 °C - Trench IGBT 4 - VCEsat with positive temperature coefficient • Mechanical features - Integrated NTC temperature sensor - Standard housing - Solder contact technology - Isolat

IGBT 模块