型号 功能描述 生产厂家 企业 LOGO 操作

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

AMD

超威半导体

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed t

AMD

超威半导体

1 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast

Catalyst

1024K (128K x 8) CMOS FLASH MEMORY

文件:300.41 Kbytes Page:23 Pages

Intel

英特尔

F28F010产品属性

  • 类型

    描述

  • 型号

    F28F010

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    1024K(128K x 8) CMOS FLASH MEMORY

更新时间:2025-12-27 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL/英特尔
23+
TSOP32
50000
全新原装正品现货,支持订货
INTEL
25+
TSSOP
255
原装正品,假一罚十!
INTEL
22+
TSOP32
20000
公司只做原装 品质保障
Rochester
25+
电联咨询
7800
公司现货,提供拆样技术支持
INTEL/英特尔
23+
18389
原厂授权一级代理,专业海外优势订货,价格优势、品种
INTEL
23+
TSOP
65480
INTEL
20+
TSSOP
2960
诚信交易大量库存现货
INTEL
05+
原厂原装
4528
只做全新原装真实现货供应
INTEL
23+24
TSOP-
9680
原盒原标.进口原装.支持实单 .价格优势
INTEL
24+/25+
4000
原装正品现货库存价优

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