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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
F2202 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime | Polyfet |   | |
F2202 | SAW Bandpass Filter Features ● RF bandpass filter ● Usable bandwidth 0.6MHz ● No matching single-ended operation ● Ceramic Surface Mounted Device Package ( 5.0 mm × 5.0 mm ) | ITF | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER 文件：35.61 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
FEMALE THREADED STANDOFFS [KEYSTONE] THREADED STANDOFFS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
high Current Toroid Inductors [J.W.Miller] | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
3M??Novec??2202 Electronic Grade Coating 文件：119.35 Kbytes Page：4 Pages | 3M | | ||
SPST and SPDT, 10 Amp Momentary Contact 文件：79.7 Kbytes Page：1 Pages | grayhill | | ||
Snap Bushings 文件：106.76 Kbytes Page：1 Pages | Heyco | |
F2202产品属性
- 类型
描述
- 型号
F2202
- 制造商
POLYFET
- 制造商全称
Polyfet RF Devices
- 功能描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
POLYFET |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
IR |
23+ |
TO-3 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-3 |
7000 |
||||
ALPHAWIRECORP |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
22+ |
TO-3 |
6000 |
终端可免费供样,支持BOM配单 |
|||
POLYFET |
24+ |
172 |
现货供应 |
||||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
原装 |
24+ |
5000 |
全现原装公司现货 |
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F2202规格书下载地址
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