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F2202中文资料

厂家型号

F2202

文件大小

37.31Kbytes

页面数量

2

功能描述

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

数据手册

下载地址一下载地址二

生产厂商

POLYFET

F2202数据手册规格书PDF详情

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Polyfet process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

4Watts Single Ended

Package Style AP

HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE

F2202产品属性

  • 类型

    描述

  • 型号

    F2202

  • 制造商

    POLYFET

  • 制造商全称

    Polyfet RF Devices

  • 功能描述

    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

更新时间:2026-5-22 15:15:00
供应商 型号 品牌 批号 封装 库存 备注 价格
POLYFET
23+
TO-59
8510
原装正品代理渠道价格优势
POLYFET
26+
172
现货供应