PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Unmatched Tees Non-Isolated

Description Miniature Unmatched Coaxial Tees provide a convenient means of separating an input signal into two components. The units are used where Isolation between the outputs and VSWR are not primary considerations. Temperature range is -54°C to +125°C. Features ● Small Size ● Broad Band ●

INTELLIGENT POWER LOW SIDE SWITCH

Description The AUIPS2041(R)(L) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switc

INTELLIGENT POWER LOW SIDE SWITCH Over temperature shutdown

Description The AUIPS2041(R)(L) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switc

US Power Cord with IEC Appliance Connector C19, V-Lock, straight

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Higher Surge ITVS, 4 I/Os, CI/O-VSS with VCC

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