型号 功能描述 生产厂家 企业 LOGO 操作
F2004

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Polyfet

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

MPD

Compact, 20W Low Cost, 2:1 Input, DC/DC Converters

MPD

F2000ERW SERIES

文件:217.73 Kbytes Page:2 Pages

MPD

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

ETCList of Unclassifed Manufacturers

未分类制造商

Silicone Cover Stranded-Core Wire - 2m 30AWG Yellow

文件:237.5 Kbytes Page:2 Pages

Adafruit

MOLDED-IN OR POTTED-IN INSERT, FLUSH MOUNTED BOTH SIDES

文件:149.35 Kbytes Page:1 Pages

WITTEN

Snap Bushings

文件:133.28 Kbytes Page:1 Pages

Heyco

boxes and ancillary products

文件:3.51246 Mbytes Page:5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

F2004产品属性

  • 类型

    描述

  • 型号

    F2004

  • 制造商

    POLYFET

  • 制造商全称

    Polyfet RF Devices

  • 功能描述

    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

更新时间:2026-1-2 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROPOWER
23+
DIP
61836
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
R
23+
TO-252
8400
专注配单,只做原装进口现货
POLYFET
23+
TO-252
5258
POLYFET
23+
TO-59
8510
原装正品代理渠道价格优势
POLYFET
23+
高频管
330
专营高频管模块,全新原装!
24+
DIP
39
POLYFET
2019+
SMD
6992
原厂渠道 可含税出货
EON
15+
SOP8
13000
普通
R
TO-252
22+
6000
十年配单,只做原装

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