N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

N-channel 600 V, 0.260 廓, 6 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：610.57 Kbytes Page：14 Pages

N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK

文件：998.82 Kbytes Page：18 Pages

isc N-Channel Mosfet Transistor

文件：297.37 Kbytes Page：2 Pages

N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK

文件：1.42346 Mbytes Page：22 Pages