9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator

F1400ASeries 9x14mmFR-4,5.0Volt,Sinewave,ClockOscillator

9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator

F1400ASeries 9x14mmFR-4,5.0Volt,Sinewave,ClockOscillator

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetim

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Precision Lab Standard N Connectors

Features oPrecisionConnector-InterfacedimensionsperMIL-STD-348Testconnector oRuggedConstruction-Numericallycontrolledmachiningisusedtoproducehighqualityuniformpartswithcontrolledconcentricityandsurfacefinishes.TheresultisexcellentSWRrepeatability.

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Medium Power

Features oMiniatureSizeandLightweight-Allmodelsareapproximately1.6incheslong,andweighlessthan14gramswithmaleconnector. oQualityInjectionMoldedConnector.

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

TX Digital VGA 1500 MHz to 2950 MHz

TheF1456isaHighGain/HighLinearity1500MHz to2950MHzTXDigitalVariableGainAmplifierused intransmitterapplications. TheF1456TXDVGAprovides32.1dBmaximum gainwith+38dBmOIP3and3.9dBnoisefigure.Up to31.5dBgaincontrolisachievedusingthe combinationofadigital

1W High Linearity RF Amplifier 1350MHz to 2800MHz

Features ■Frequencyrange:1350MHzto2800MHz ■TBDtypicalgainat2100MHz ■+30dBmtypicalOP1dBat2100MHz ■50ΩSingle-endedinputandoutputimpedances ■5Vpowersupply ■180mAtypicalquiescentsupplycurrent ■1.8Vlogiccompatiblestandbymodeforpower savings ■Operatingtempe

1W High Linearity RF Amplifier 1350MHz to 2800MHz

Features ■Frequencyrange:1350MHzto2800MHz ■TBDtypicalgainat2100MHz ■+30dBmtypicalOP1dBat2100MHz ■50ΩSingle-endedinputandoutputimpedances ■5Vpowersupply ■180mAtypicalquiescentsupplycurrent ■1.8Vlogiccompatiblestandbymodeforpower savings ■Operatingtempe

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

High Gain RF Amplifier 1.8GHz to 6.4GHz

Features RFrange:1.8GHzto6.4GHz 39.5dBtypicalgainat2.6GHzinhighgainmode 35.5dBtypicalgainat2.6GHzinlowgainmode 2.5dBNFat2.6GHz 50Ωsingle-endedinputandoutputimpedances 5Vpowersupply 75mAquiescentcurrentconsumption 1.8VlogiccompatibleStandbyModef

High Gain RF Amplifier 1.8GHz to 6.4GHz

Features RFrange:1.8GHzto6.4GHz 39.5dBtypicalgainat2.6GHzinhighgainmode 35.5dBtypicalgainat2.6GHzinlowgainmode 2.5dBNFat2.6GHz 50Ωsingle-endedinputandoutputimpedances 5Vpowersupply 75mAquiescentcurrentconsumption 1.8VlogiccompatibleStandbyModef

HCMOS 2.0x1.6mm 2.5V SMD Oscillator

文件：491.49 Kbytes Page：2 Pages

Rose Assembly

文件：284.62 Kbytes Page：8 Pages

Rose Assembly

文件：279.91 Kbytes Page：5 Pages

包装：盒 描述：LINE FILTER 250VAC 6A CHASS MNT 滤波器 电力线滤波器模块

包装：盒 描述：LINE FILTER 250VAC 10A CHASS MNT 滤波器 电力线滤波器模块

Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

HCMOS 2.0x1.6mm 2.5V SMD Oscillator

文件：491.49 Kbytes Page：2 Pages

Florence series

文件：3.55283 Mbytes Page：62 Pages

Florence Lens

文件：4.55905 Mbytes Page：66 Pages

Florence Lens array

文件：4.35147 Mbytes Page：58 Pages

Florence series

文件：3.95032 Mbytes Page：52 Pages

RF Amplifier 700MHz to 1.1GHz

文件：2.24241 Mbytes Page：20 Pages

RF Amplifier

文件：2.24885 Mbytes Page：19 Pages

RF Amplifier 700MHz to 1.1GHz

文件：2.24241 Mbytes Page：20 Pages

RF Amplifier

文件：2.24885 Mbytes Page：19 Pages

RF Amplifier 1.7GHz to 2.2GHz

文件：2.46355 Mbytes Page：17 Pages

RF Amplifier 700MHz to 1.1GHz

文件：2.24241 Mbytes Page：20 Pages

RF Amplifier

文件：2.24885 Mbytes Page：19 Pages

RF Amplifier 700MHz to 1.1GHz

文件：2.24241 Mbytes Page：20 Pages

RF Amplifier

文件：2.24885 Mbytes Page：19 Pages

RF Amplifier 1.7GHz to 2.2GHz

文件：2.46355 Mbytes Page：17 Pages

RF Amplifier

文件：2.11589 Mbytes Page：16 Pages

RF Amplifier 1.7GHz to 2.2GHz

文件：2.46355 Mbytes Page：17 Pages

RF Amplifier

文件：2.11589 Mbytes Page：16 Pages

RF Amplifier 1.7GHz to 2.2GHz

文件：2.46355 Mbytes Page：17 Pages

RF Amplifier

文件：2.11589 Mbytes Page：16 Pages

RF Amplifier 1.7GHz to 2.2GHz

文件：2.46355 Mbytes Page：17 Pages