型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 12.3A, RDS(ON) = 0.32W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

13A 650V N-channel enhancement mode field effect transistor

文件:685.58 Kbytes Page:5 Pages

YFWDIODE

佑风微

N-Channel MOSFET 650V, 14A, 0.46(ohm)

文件:835.88 Kbytes Page:6 Pages

MGCHIP

更新时间:2025-9-25 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
24+
NA/
27326
原装现货,当天可交货,原型号开票
CET
25+
TO-251
10
原装正品,假一罚十!
CET
20+
TO-251
38900
原装优势主营型号-可开原型号增税票
CET
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/華瑞
23+
TO-251
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
21+
TO-251
100
原装现货假一赔十
PHI
24+
TSOP
17860
公司现货库存,支持实单
CET
23+
TO-251
10065
原装正品,有挂有货,假一赔十
C
23+
TO-251
6000
原装正品,支持实单
IR
23+
SOT23-3
7000

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