PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

EMC滤波器

包装：盒 描述：LINE FILTER 250VAC 20A CHASS MNT 滤波器 电力线滤波器模块

SAWs

8-bit Microcontrollers

文件：1.55241 Mbytes Page：80 Pages

8-bit Microcontrollers

文件：1.55241 Mbytes Page：80 Pages

Aluminum Electrolytic Capacitors Axial High Temperature, High Ripple Current

FEATURES • Extra long useful life: up to 8000 h at 125 °C • Low ESR levels provide very high ripple current capability • Miniaturized, high CV-product per unit volume • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, insulated with

This specification covers the requirements for product performance, test methods and quality assurance provisions of 126B-SERIES

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

Aluminum Electrolytic Capacitors Axial High Temperature, High Ripple Current

文件：219.14 Kbytes Page：9 Pages

TUBE DRIVER - INTERSTAGE TRANSFORMER

文件：200.12 Kbytes Page：1 Pages