丝印代码：F1016；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

丝印代码：F1016；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

丝印代码：F1016；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

丝印代码：F1016；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes Page：292 Pages

丝印代码：F1016；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes Page：292 Pages

丝印代码：F1016；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes Page：292 Pages

Compact I/O station for DeviceNet test us-english

■ Removable 5-pin screw-clamp terminal block, for DeviceNet fieldbus connection ■ Rotary coding switch for setting the DeviceNet™ address ■ 16 Kanäle DI ■ 16 konfigurierbare Kanäle, DI oder DO ■ 24VDC ■ minusschaltend ■ Ausgangsstrom: 0.5A ■ Protection class IP20

Band-Reject YIG Filter

• Ultra-low insertion loss\n\n• Reduced Size: 1.4\" filter for 10- and most 12-stage units; 1.7\" for 16-stage and certain 12-stage units\n\n• More stages: 7, 10 and 16-stage standard designs\n\n• Increased skirt selectivity: 42 to 96 dB/octave nominal skirt rolloff \n\n• Increased notch depth: 50 t;

ATO Blade Fuse Rated 32V

文件：178.87 Kbytes Page：2 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：41.35 Kbytes Page：2 Pages

ATO Blade Fuse Rated 32V

文件：178.87 Kbytes Page：2 Pages

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

Integrated Circuit AF Small-Signal Amplifier for Tape Recorder

Integrated Circuit AF Small–Signal Amplifier for Tape Recorder

Recording/playback and 2 W audio power amplifier

GENERAL DESCRIPTION The TDA1016 is a monolithic integrated audio power amplifier, preamplifier and A.L.C. circuit designed for applications in radio-recorders and recorders. The wide supply voltage range makes this circuit very suitable for d.c. and a.c. apparatus. The circuit incorporates the fo

16A SCRs

DESCRIPTION The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices