Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET® Power MOSFET

1010 Pressure Gauge

FEATURES Solid-front case design for safety Wide selection of Bourdon tube materials and pressure ranges PLUS!™ Performance option to dampen vibration, shock and pulsation effects to provide a liquid-fill performance in a dry gauge

Dead Blow Nylon Hammers

Die-cast one piece head and handle of aluminium alloy. Fitted with shock absorbent rubber grip. Screw-in faces of special nylon. The hollow head is partially filled with shot which adds to the weight and prevents re-bound. Allowing heavy and effective blows with maximum impact control.

Colorful Square Tactile Button Switch Assortment - 15 pack

文件：107.37 Kbytes Page：1 Pages

Voltage rating up to 3800V

文件：1.35889 Mbytes Page：5 Pages

Phase Control Thyristors

文件：1.3645 Mbytes Page：5 Pages