Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

FAST SWITCHING PLASTIC DIODES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

ULTRAFAST RECOVERY RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switchin

GaAs N-Channel MES IC

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