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F1008

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended life

POLYFET

F1008

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description\nSilicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.\n\"Polyfet\" process features gold metal for greatly extended lifeti

POLYFET

My-Com precision switches

文件:81.48 Kbytes Page:1 Pages

IVO

堡盟电子

包装:散装 描述:POS TRANS-ELEMENT \u0026 BRACKET ASSY 传感器,变送器 位置传感器 - 角度、线性位置测量

ETC

知名厂家

旋转位置传感器

HONEYWELL

霍尼韦尔

旋转位置传感器

HONEYWELL

霍尼韦尔

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A)

SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEA TURES l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installation l Plastic package has Underwriter Laboratory

PANJIT

強茂

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

PANJIT

強茂

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

F1008产品属性

  • 类型

    描述

  • 商标:

    Honeywell

  • 工厂包装数量:

    1

  • 子类别:

    Sensors

  • 产品类型:

    Motion & Position Sensors

更新时间:2026-7-23 18:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
POLYFET
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
POLYFET
26+
227
现货供应
POLYFET
22+
假一赔十
20000
公司只做原装 品质保障
POLYFET
23+
TO-59
8510
原装正品代理渠道价格优势
HONEYWELL/霍尼韦尔
23+
DIPSMD
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
POLYFET
1607+
假一赔十
3
一级代理,专注军工、汽车、医疗、工业、新能源、电力
POLYFET
2023+
假一赔十
8800
正品渠道现货 终端可提供BOM表配单。
POLYFET
23+
假一赔十
3
全新原装正品现货,支持订货
POLYFET
23+
2503
原厂原装正品
Honeywell
2022+
1
全新原装 货期两周

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