包装：散装 描述：BREADBRD TERM STRIP 4.12X2.31\ 原型开发，制造品 无焊试验板

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa