Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

包装：散装 描述：BOARD EVALUATION FOR ADG918 开发板，套件，编程器 射频评估和开发套件，开发板

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

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丝印代码：3B；NPN SILICON PLANAR VHF/UHF TRANSISTOR

NPN SILICON PLANAR VHF/UHF TRANSISTOR

Amplifier Transistors

Amplifier Transistors NPN Silicon

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external