功能：模拟前端（AFE） 包装：盒 描述：BOARD EVAL ADAV4622 开发板，套件，编程器 评估和演示板及套件

N and P-Channel Enhancement Mode Power MOSFET

Description The 4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =6.4A RDS(ON)

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Relampable Indicator Light

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VHB?줥apes

文件：641.8 Kbytes Page：10 Pages

VHB Tape - Specialty Tapes

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