功能：模拟前端（AFE） 包装：散装 描述：BOARD EVALUATION FOR ADAV4422 开发板，套件，编程器 评估和演示板及套件

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

JST PH 2.0mm Pitch Connector Kit - 220 Piece Kit

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N-Channel 20-V (D-S) MOSFET

文件：341.22 Kbytes Page：5 Pages