3-W Stereo Audio Power Amplifier with Advanced DC Volume Control

DESCRIPTOIN The EUA6011A is a stereo audio power amplifier that drives 3 W/channel of continuous RMS power into a 3-Ωload. Advanced dc volume control minimizes external components and allows BTL (speaker) volume control and SE (headphone) volume control. Notebook and pocket PCs benefit from the

3-W Stereo Audio Power Amplifier with Advanced DC Volume Control

3-W Stereo Audio Power Amplifier with Advanced DC Volume Control

DESCRIPTOIN The EUA6011A is a stereo audio power amplifier that drives 3 W/channel of continuous RMS power into a 3-Ωload. Advanced dc volume control minimizes external components and allows BTL (speaker) volume control and SE (headphone) volume control. Notebook and pocket PCs benefit from the

3-W Stereo Audio Power Amplifier with Advanced DC Volume Control

DESCRIPTOIN The EUA6011A is a stereo audio power amplifier that drives 3 W/channel of continuous RMS power into a 3-Ωload. Advanced dc volume control minimizes external components and allows BTL (speaker) volume control and SE (headphone) volume control. Notebook and pocket PCs benefit from the

3-W Stereo Audio Power Amplifier with Advanced DC Volume Control

DESCRIPTOIN\nThe EUA6011A is a stereo audio power amplifier that drives 3 W/channel of continuous RMS power into a 3-Ωload. Advanced dc volume control minimizes external components and allows BTL (speaker) volume control and SE (headphone) volume control. Notebook and pocket PCs benefit from the int Advanced DC Volume Control With 2-dB Steps From -40 dB to 20 dB\n  -Fade Mode \n  -Maximum Volume Setting for SE Mode\n  -Adjustable SE Volume Control\n Referenced to BTL Volume control\n3 W into 3-ΩSpeakers \nStereo Input MUX\nDifferential Inputs\nRoHS Compliant and 100% Lead (Pb)-Free;

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

High-speed Data Converter

High-speed Data Converter

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free